PART |
Description |
Maker |
TC58DVG02A1FI0 |
1 Gbit (128M x *8its) CMOS NAND EPROM
|
Toshiba
|
TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
TC58NVG0S3AFT05 |
1 GBIT (128M × 8 BITS) CMOS NAND EEPROM
|
Toshiba. Toshiba Semiconductor
|
MX27C256 MX27C256PC-10 MX27C256PC-12 MX27C256PC-15 |
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDSO28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 100 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 150 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28 256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
|
PROM Macronix International Co., Ltd.
|
HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns 256K (32K x 8-bit) UV EPROM, 250ns 32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM 256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
TC582562AXB |
CMOS NAND EPROM
|
Toshiba
|
K9K1G08U0M-YIB0 K9K1G08U0M-YCB0 |
128M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
CY27C256 CY27C256-120 CY27C256-120JC CY27C256-120P |
32K x 8-Bit CMOS EPROM 32K X 8 UVPROM, 55 ns, CDIP28 32K x 8-Bit CMOS EPROM 32K X 8 OTPROM, 150 ns, PDSO32 CONN PLUG HOUSING HA SIZE2 UPPER
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
TC58NS128BDC |
128 MBit CMOS NAND EPROM
|
Toshiba
|